  表示样品的电阻,表示样品的磁电阻。
  Fig.7:Theresistanceandmagnetoresistanceat800Oeoftheferromagneticpointnanoconstrictionwithdifferentwidth，istheresistanceofthenanoconstriction,isthemagnetoresistanceofthenanoconstriction.
3结论
小型化是信息产业的发展趋势，本文首次成功的运用双层光刻胶剥离技术和真空薄膜沉积技术在硅片表面上制作了最小宽度为20纳米的铁磁金属薄膜纳米点连接，测量了样品在不同温度下的磁电阻和I-V特性曲线，对不同宽度的纳米点连接的磁电阻现象进行了比较，实验结果表明在这个尺度范围内，样品的电导行为受量子化电导效应的作用较小，磁电阻行为仍然主要是各向异性磁电阻效应，并且磁电阻的比例与样品的宽度也没有必然的关系，从一定程度上表明，在基于磁电阻现象的超高密度磁头的尺度可以进一步减小为20纳米。
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图6：在80K时，不同宽度的铁磁金属薄膜纳米点连接对应的电阻和1000Oe磁场时的磁电阻,
  表示样品的电阻，表示样品的磁电阻。
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