 
图7两量子点间有一定点间隧穿耦合( )时，不同导线与点间耦合强度情况下，电子隧穿双量子点干涉仪结构的示意图，其中实线和虚线分别代表强耦合和弱耦合。
4. 结论
研究了不同点-导线间耦合情况下，电子隧穿双量子点干涉仪结构的性质。结果发现由于不同点-导线间耦合，导致双量子点干涉仪结构的对称性不同和电子传输路径不同，使得电子隧穿双量子点干涉仪结构呈现出一系列的新奇特性：点-导线间的耦合强度不同，两量子点中阶梯状的平均电子占据数的分离程度不同，且两台阶的平缓程度也不同；考虑点间隧穿耦合时，点-导线间的耦合强度对双量子点干涉仪结构中电子输运的影响加剧；无论是否考虑点间隧穿耦合强度，与平均粒子占据数的阶梯结构中台阶的急缓程度相对应，不同点-导线间隧穿耦合强度，LDOS曲线峰强不同；线性电导劈裂依赖于点-导线间耦合。这些结果表明结构决定性能，也为设计可控量子器件提供一个理论依据。
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Quantum transport in double quantum dot interferometeraffected by tunable dot-lead coupling*
Yuan Rui-Yang1）+ Wang Ru-Zhi2） Yan Hui2） Zhou Yun-Song1）
1）(Center of TheoreticalPhysics, Department of Physics, Capital Normal University, Beijing 100048, PRChina)
2）(Laboratory of Thin FilmMaterials, College of Materials Science and Engineering，Beijing University ofTechnology, Beijing 100022, P. R. China)
Abstract
By solving the quantumtransport in double quantum dot interferometer, the effect of dot-lead couplingon them is theoretically investigated. The results show that, tuning thedot-lead coupling induces the symmetry of double quantum dot interferometer andthe road of electron transporting different. These results in the splitting oflinear conductance relays on dot-lead coupling, and the step shape of numberpopulation are changed. It provides a theoretical proof for devising controllablequantum devices.
Keywords: dot-lead coupling, doublequantum dot interferometer, quantum transport
PACC: 7320D
* 北京市优秀人才基金（批准号：2009D）和北京市教委基金（批准号：KM2）资助的课题
* Project supported by the Beijing Excellent Talent, China (Grant No. 2009D), and the Foundation of Beijing EducationalCommission, China (Grant No. KM2)
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